| PART |
Description |
Maker |
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| MJD31CQ MJD31CQ-13 MJD31CQ-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
|
Diodes Incorporated
|
| 2N2151 JANTX2N2151 JAN2N2151 |
NPN Transistor
5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX
|
Microsemi Corporation
|
| 2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| SCS914DSTL |
0.3A , 100V Plastic-Encapsulated Switching Diode
|
SeCoS Halbleitertechnologie GmbH
|
| MJD31C1 MJD31CRL |
Power 3A 100V Discrete NPN
|
ON Semiconductor
|
| ZXTN19100CZ ZXTN19100CZTA |
100V NPN medium power transistor in SOT89
|
Diodes Incorporated
|
